Non-Destructive Characterization of Electronic Properties of Pre- and Post-Processing Silicon Surfaces by UHV Contactless Capacitance-Voltage Method

Toshiyuki Yoshida; Tamotsu Hashizume; Hideki Hasegawa; Takamasa Sakai

doi:https://doi.org/10.7567/SSDM.1998.A-5-3

[A-5-3] Non-Destructive Characterization of Electronic Properties of Pre- and Post-Processing Silicon Surfaces by UHV Contactless Capacitance-Voltage Method

Toshiyuki Yoshida、Tamotsu Hashizume、Hideki Hasegawa、Takamasa Sakai (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University、2.Dainippon Screen Manufacturing Co., Ltd.)

https://doi.org/10.7567/SSDM.1998.A-5-3

1998 International Conference on Solid State Devices and Materials

[A-5-3] Non-Destructive Characterization of Electronic Properties of Pre- and Post-Processing Silicon Surfaces by UHV Contactless Capacitance-Voltage Method