[A-5-5] Interface States for Silicon Oxide Layers Formed by Use of Catalytic Activity of a Platinuim Layer

Toshiro Yuasa、Kazuhiro Yamanaka、Kenji Yoneda、Yoshihiro Todokoro、Hikaru Kobayashi (1.Institute of Scientific and Industrial Research, Osaka University、2.ULSI Process Technology Development Center, Matsushita Electronic Corporation、3.Research Planning Department, Corporate Research Division, Matsushita Electric Industrial Co. Ltd.、4.PRESTO, Japan Science and Technology Corporation)

https://doi.org/10.7567/SSDM.1998.A-5-5