[B-1-3] Silicide-Extension Technology for High-Density Embedded SRAM Cells in 0.18um-CMOS Generation and Beyond

K. Matsui、K. Noda、K. Inoue、T. Itani、H. Iwasaki、T. Yoshii、T. Tanigawa (1.ULSI Device Development Laboratory, NEC Corporation)

https://doi.org/10.7567/SSDM.1998.B-1-3