[B-1-3] Silicide-Extension Technology for High-Density Embedded SRAM Cells in 0.18um-CMOS Generation and Beyond

K. Matsui, K. Noda, K. Inoue, T. Itani, H. Iwasaki, T. Yoshii, T. Tanigawa (1.ULSI Device Development Laboratory, NEC Corporation)

https://doi.org/10.7567/SSDM.1998.B-1-3