[B-4-4] Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs

Tomohiro Saito、Atsushi Yagishita、Seiji Inumiya、Kazuaki Nakajima、Yasushi Akasaka、Yoshio Ozawa、Hiroyuki Yano、Katsuhiko Hieda、Kyoichi Suguro、Tsunetoshi Arikado、Katsuya Okumura (1.Microelectronics Engineering Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1998.B-4-4