[B-4-4] Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs

Tomohiro Saito, Atsushi Yagishita, Seiji Inumiya, Kazuaki Nakajima, Yasushi Akasaka, Yoshio Ozawa, Hiroyuki Yano, Katsuhiko Hieda, Kyoichi Suguro, Tsunetoshi Arikado, Katsuya Okumura (1.Microelectronics Engineering Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.1998.B-4-4