Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose SIMOX Structures

Keisuke KAWAMURA; Takayuki YANO; Isao HAMAGUCHI; Seiji TAKAYAMA; Yoichi NAGATAKE; Atsuki MATSUMURA

doi:https://doi.org/10.7567/SSDM.1998.B-6-2

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜 1998年9月10日
International Conference Center Hiroshima, Hiroshima, Japan

[B-6-2] Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose SIMOX Structures

Keisuke KAWAMURA、Takayuki YANO、Isao HAMAGUCHI、Seiji TAKAYAMA、Yoichi NAGATAKE、Atsuki MATSUMURA (1.Advanced Technology Research Laboratories, Nippon Steel Corporation)

https://doi.org/10.7567/SSDM.1998.B-6-2

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