[C-10-2] Characteristics of GaN MESFET Grown on Sapphire Substrate by MOCVD

Takashi Egawa、Kouichi Nakamura、Hiroyasu Ishikawa、Takashi Jimbo、Masayoshi Umeno (1.Research Center for Micro-Structure Devices, Nagoya Institute of Technology、2.Department of Electrical and Computer Engineering, Nagoya Institute of Technology、3.Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.1998.C-10-2