Interface Properties of Metal/n-GaN Schottky Contacts

Yuji Koyama; Tamotsu Hashizume; Hideki Hasegawa

doi:https://doi.org/10.7567/SSDM.1998.C-10-3

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜 1998年9月10日
International Conference Center Hiroshima, Hiroshima, Japan

[C-10-3] Interface Properties of Metal/n-GaN Schottky Contacts

Yuji Koyama、Tamotsu Hashizume、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1998.C-10-3

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