[C-9-3] High-Temperature Behaviors of GaN Schottky Barrier Diode

Kouichi Nakamura、Hiroyasu Ishikawa、Takashi Egawa、Takashi Jimbo、Masayoshi Umeno (1.Department of Electrical and Computer Engineering, Nagoya Institute of Technology、2.Research Center for Micro-Structure Devices, Nagoya Institute of Technology、3.Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.1998.C-9-3