[C-9-3] High-Temperature Behaviors of GaN Schottky Barrier Diode

Kouichi Nakamura, Hiroyasu Ishikawa, Takashi Egawa, Takashi Jimbo, Masayoshi Umeno (1.Department of Electrical and Computer Engineering, Nagoya Institute of Technology, 2.Research Center for Micro-Structure Devices, Nagoya Institute of Technology, 3.Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology)

https://doi.org/10.7567/SSDM.1998.C-9-3