[C-9-6] Theoretical Models for the Electron Drift and Hall Mobility in N-Type 4H- and 6H-SiC

K. M. Itoh, T. Kinoshita, J. Muto, M. Schadt, G. Pensl (1.Dept. Applied Physics and Physico-Informatics., Keio University, 2.Institut fur Angewndte Physik, Universitat Erlangen-Nurnberg)

https://doi.org/10.7567/SSDM.1998.C-9-6