Theoretical Models for the Electron Drift and Hall Mobility in N-Type 4H- and 6H-SiC

K. M. Itoh; T. Kinoshita; J. Muto; M. Schadt; G. Pensl

doi:https://doi.org/10.7567/SSDM.1998.C-9-6

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜 1998年9月10日
International Conference Center Hiroshima, Hiroshima, Japan

[C-9-6] Theoretical Models for the Electron Drift and Hall Mobility in N-Type 4H- and 6H-SiC

K. M. Itoh、T. Kinoshita、J. Muto、M. Schadt、G. Pensl (1.Dept. Applied Physics and Physico-Informatics., Keio University、2.Institut fur Angewndte Physik, Universitat Erlangen-Nurnberg)

https://doi.org/10.7567/SSDM.1998.C-9-6

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