Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN

Doo-Hyeb YOUN; Mohamed LACHAB; Maosheng HAO; Tomoya SUGAHARA; Kenji YAMASHITA; Yoshiki NAOI; Shiro SAKAI

doi:https://doi.org/10.7567/SSDM.1998.D-4-8

[D-4-8] Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN

Doo-Hyeb YOUN, Mohamed LACHAB, Maosheng HAO, Tomoya SUGAHARA, Kenji YAMASHITA, Yoshiki NAOI, Shiro SAKAI (1.Department of Electrical and Electronic Engineering, University of Tokushima, 2.Satellite Venture Business Laboratory, Nitride Photonic Semiconductor Laboratory of Tokushima University)

https://doi.org/10.7567/SSDM.1998.D-4-8

1998 International Conference on Solid State Devices and Materials

[D-4-8] Optimization Process in the P-Type Activation and Its Relationship with the Defects Structure in Mg-Doped p-GaN