In-Situ UHV Study on Correlation between Microscopic Surface Structures and Macroscopic Electronic Properties in Si Interlayer-Based Surface Passivation of GaAs

Morimichi Mutoh; Naohiro Tsurumi; Tamotsu Hashizume; Hideki Hasegawa

doi:https://doi.org/10.7567/SSDM.1998.D-5-2

[D-5-2] In-Situ UHV Study on Correlation between Microscopic Surface Structures and Macroscopic Electronic Properties in Si Interlayer-Based Surface Passivation of GaAs

Morimichi Mutoh、Naohiro Tsurumi、Tamotsu Hashizume、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1998.D-5-2

1998 International Conference on Solid State Devices and Materials

[D-5-2] In-Situ UHV Study on Correlation between Microscopic Surface Structures and Macroscopic Electronic Properties in Si Interlayer-Based Surface Passivation of GaAs