Carrier Mobility Dependence of Electron Spin Relaxation in GaAs MQWs

R. Terauchi; Y. Ohno; T. Adachi; A. Sato; F. Matsukura; A. Tackeuchi; H. Ohno

doi:https://doi.org/10.7567/SSDM.1998.D-5-5

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜 1998年9月10日
International Conference Center Hiroshima, Hiroshima, Japan

[D-5-5] Carrier Mobility Dependence of Electron Spin Relaxation in GaAs MQWs

R. Terauchi、Y. Ohno、T. Adachi、A. Sato、F. Matsukura、A. Tackeuchi、H. Ohno (1.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University、2.Department of Applied Physics, Waseda University)

https://doi.org/10.7567/SSDM.1998.D-5-5

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