Carrier Mobility Dependence of Electron Spin Relaxation in GaAs MQWs

R. Terauchi; Y. Ohno; T. Adachi; A. Sato; F. Matsukura; A. Tackeuchi; H. Ohno

doi:https://doi.org/10.7567/SSDM.1998.D-5-5

1998 International Conference on Solid State Devices and Materials

Sep 7, 1998 - Sep 10, 1998
International Conference Center Hiroshima, Hiroshima, Japan

[D-5-5] Carrier Mobility Dependence of Electron Spin Relaxation in GaAs MQWs

R. Terauchi, Y. Ohno, T. Adachi, A. Sato, F. Matsukura, A. Tackeuchi, H. Ohno (1.Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, 2.Department of Applied Physics, Waseda University)

https://doi.org/10.7567/SSDM.1998.D-5-5

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