A 1.3-um Operation Si-Based Planar P-I-N Photodiode with Ge Absorption Layer Using Strain-Relaxing Selective Epitaxial Growth Technology

M. Sugiyama; T. Morikawa; T. Tatsumi; T. Aoyama; F. Sato

doi:https://doi.org/10.7567/SSDM.1998.D-6-7

1998 International Conference on Solid State Devices and Materials

Sep 7, 1998 - Sep 10, 1998
International Conference Center Hiroshima, Hiroshima, Japan

[D-6-7] A 1.3-um Operation Si-Based Planar P-I-N Photodiode with Ge Absorption Layer Using Strain-Relaxing Selective Epitaxial Growth Technology

M. Sugiyama, T. Morikawa, T. Tatsumi, T. Aoyama, F. Sato (1.ULSI Device Development Laboratories, NEC Corporation, 2.Silicon Systems Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1998.D-6-7

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