[D-9-3] Dependence of Hopping-Conduction Energy of Holes on Distance between Trap Sites in SiO2: a Molecular Orbital Calculation

Yoshiaki Takemura, Jiro Ushio, Takuya Maruizumi, Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1998.D-9-3