Single Hole Tunnelling in Side-Gated SiGe Quantum Dots

S. Kanjanachuchai; J. M. Bonar; G. J. Parker; H. Ahmed

doi:https://doi.org/10.7567/SSDM.1998.LC-1

1998 International Conference on Solid State Devices and Materials

Sep 7, 1998 - Sep 10, 1998
International Conference Center Hiroshima, Hiroshima, Japan

[LC-1] Single Hole Tunnelling in Side-Gated SiGe Quantum Dots

S. Kanjanachuchai, J. M. Bonar, G. J. Parker, H. Ahmed (1.Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, 2.Department of Electronics and Computer Science, University of Southampton)

https://doi.org/10.7567/SSDM.1998.LC-1

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