Single Hole Tunnelling in Side-Gated SiGe Quantum Dots

S. Kanjanachuchai; J. M. Bonar; G. J. Parker; H. Ahmed

doi:https://doi.org/10.7567/SSDM.1998.LC-1

1998 International Conference on Solid State Devices and Materials

1998年9月7日〜 1998年9月10日
International Conference Center Hiroshima, Hiroshima, Japan

[LC-1] Single Hole Tunnelling in Side-Gated SiGe Quantum Dots

S. Kanjanachuchai、J. M. Bonar、G. J. Parker、H. Ahmed (1.Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge、2.Department of Electronics and Computer Science, University of Southampton)

https://doi.org/10.7567/SSDM.1998.LC-1

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