Dielectric Degradation Mechanism of SiO2 Examined through First-Principles Calculations: Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field

Isao Kitagawa; Takuya Maruizumi; Jiro Ushio; Katsuhiko Kubota; Masanobu Miyao

doi:https://doi.org/10.7567/SSDM.1999.A-10-1

[A-10-1] Dielectric Degradation Mechanism of SiO2 Examined through First-Principles Calculations: Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field

Isao Kitagawa, Takuya Maruizumi, Jiro Ushio, Katsuhiko Kubota, Masanobu Miyao (1.Advanced Research Laboratory, Hitachi, Ltd., 2.Semiconductor and Integrated Circuits division, Hitachi, Ltd., 3.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.1999.A-10-1

1999 International Conference on Solid State Devices and Materials

[A-10-1] Dielectric Degradation Mechanism of SiO2 Examined through First-Principles Calculations: Electric Conduction Associated with Electron Traps and Its Stability under an Electric Field