Pocket Profiling of 0.1 μm n-MOSFETs Using High Dose Indium Implantation

Kentaro Nakanishi; Akira Hiroki; Shinji Odanaka; Kyoji Yamashita

doi:https://doi.org/10.7567/SSDM.1999.A-3-3

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[A-3-3] Pocket Profiling of 0.1 μm n-MOSFETs Using High Dose Indium Implantation

Kentaro Nakanishi, Akira Hiroki, Shinji Odanaka, Kyoji Yamashita (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.)

https://doi.org/10.7567/SSDM.1999.A-3-3

▲