Pocket Profiling of 0.1 μm n-MOSFETs Using High Dose Indium Implantation

Kentaro Nakanishi; Akira Hiroki; Shinji Odanaka; Kyoji Yamashita

doi:https://doi.org/10.7567/SSDM.1999.A-3-3

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[A-3-3] Pocket Profiling of 0.1 μm n-MOSFETs Using High Dose Indium Implantation

Kentaro Nakanishi、Akira Hiroki、Shinji Odanaka、Kyoji Yamashita (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.)

https://doi.org/10.7567/SSDM.1999.A-3-3

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