25V - 13 mΩ・mm2 Low On-Resistance Novel Structure Trench Gate LDMOS

Yusuke Kawaguchi; Takeshi Sano; Akio Nakagawa

doi:https://doi.org/10.7567/SSDM.1999.A-4-1

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[A-4-1] 25V - 13 mΩ・mm2 Low On-Resistance Novel Structure Trench Gate LDMOS

Yusuke Kawaguchi、Takeshi Sano、Akio Nakagawa (1.Advanced Discrete Semiconductor Technology Laboratory, Toshiba Corporation、2.Microelectronics Center, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.1999.A-4-1

▲