25V - 13 mΩ・mm2 Low On-Resistance Novel Structure Trench Gate LDMOS

Yusuke Kawaguchi; Takeshi Sano; Akio Nakagawa

doi:https://doi.org/10.7567/SSDM.1999.A-4-1

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[A-4-1] 25V - 13 mΩ・mm2 Low On-Resistance Novel Structure Trench Gate LDMOS

Yusuke Kawaguchi, Takeshi Sano, Akio Nakagawa (1.Advanced Discrete Semiconductor Technology Laboratory, Toshiba Corporation, 2.Microelectronics Center, Toshiba Corporation Semiconductor Company)

https://doi.org/10.7567/SSDM.1999.A-4-1

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