Source/Drain Extension-to-Gate Overlap Scaling in Deep Sub-Micron MOSFETs

A. Inani; H. Deshpande; S. Krishnan; M.-R. Lin; Jason C. S. Woo

doi:https://doi.org/10.7567/SSDM.1999.A-6-2

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[A-6-2] Source/Drain Extension-to-Gate Overlap Scaling in Deep Sub-Micron MOSFETs

A. Inani、H. Deshpande、S. Krishnan、M.-R. Lin、Jason C. S. Woo (1.Department of Electrical Engineering, University of California、2.Technology Development Group, Advanced Micro Devices)

https://doi.org/10.7567/SSDM.1999.A-6-2

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