Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO2/Si Interfaces

Heiji Watanabe; Toshio Baba; Masakazu Ichikawa

doi:https://doi.org/10.7567/SSDM.1999.A-9-1

[A-9-1] Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO2/Si Interfaces

Heiji Watanabe、Toshio Baba、Masakazu Ichikawa (1.Fundamental Research Laboratories, NEC Corporation、2.Joint Research Center for Atom Technology, Angstrom Technology Partnership)

https://doi.org/10.7567/SSDM.1999.A-9-1

1999 International Conference on Solid State Devices and Materials

[A-9-1] Mechanism of Layer-by-Layer Oxidation of Si (001) Surfaces Proceeding by Two-Dimensional Oxide-Island Nucleation at SiO2/Si Interfaces