Creation of Bonded SOI Substrates with CZ Silicon Higher than 1000 Ωcm in Resistivity

Takao Abe; Shigeru Saito; Ken Aihara; Weifeng Qu; Yoshinori Hayamizu; Masanori Kimura; Kiyoshi Mitani

doi:https://doi.org/10.7567/SSDM.1999.B-10-3

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[B-10-3] Creation of Bonded SOI Substrates with CZ Silicon Higher than 1000 Ωcm in Resistivity

Takao Abe, Shigeru Saito, Ken Aihara, Weifeng Qu, Yoshinori Hayamizu, Masanori Kimura, Kiyoshi Mitani (1.Isobe R&D Center, Shin-Etsu Handotai Co., Ltd.)

https://doi.org/10.7567/SSDM.1999.B-10-3

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