Photoluminescence of Low-Energy B ± Implanted Silicon under Ultraviolet Light Excitation

Koichi Terashima; Kousuke Miyoshi; Michio Tajima

doi:https://doi.org/10.7567/SSDM.1999.B-15-4

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[B-15-4] Photoluminescence of Low-Energy B ± Implanted Silicon under Ultraviolet Light Excitation

Koichi Terashima, Kousuke Miyoshi, Michio Tajima (1.ULSI Device Development Laboratory, NEC Corporation, 2.Institute of Space and Astronautical Science)

https://doi.org/10.7567/SSDM.1999.B-15-4

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