Impact of Nitrogen Profile in Gate Oxynitride on CMOS Characteristics

Yasuyuki Tamura; Mayumi Shigeno; Satoshi Okubo; Kiyoshi Irino; Toshiro Nakanishi; Kanetake Takasaki

doi:https://doi.org/10.7567/SSDM.1999.B-3-3

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[B-3-3] Impact of Nitrogen Profile in Gate Oxynitride on CMOS Characteristics

Yasuyuki Tamura, Mayumi Shigeno, Satoshi Okubo, Kiyoshi Irino, Toshiro Nakanishi, Kanetake Takasaki (1.ULSI Technology Labs., Fujitsu Laboratories Ltd.)

https://doi.org/10.7567/SSDM.1999.B-3-3

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