[B-3-4] Control of Ion Bombardment and Species for Ultra Low Temperature Formation of Silicon Nitride Gate Dielectric Films Using Plasma Chemical Vapor Deposition

Hiroyuki Ohta、Atsushi Nagashima、Masafumi Ito、Masaru Hori、Toshio Goto (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

https://doi.org/10.7567/SSDM.1999.B-3-4