Control of Ion Bombardment and Species for Ultra Low Temperature Formation of Silicon Nitride Gate Dielectric Films Using Plasma Chemical Vapor Deposition

Hiroyuki Ohta; Atsushi Nagashima; Masafumi Ito; Masaru Hori; Toshio Goto

doi:https://doi.org/10.7567/SSDM.1999.B-3-4

[B-3-4] Control of Ion Bombardment and Species for Ultra Low Temperature Formation of Silicon Nitride Gate Dielectric Films Using Plasma Chemical Vapor Deposition

Hiroyuki Ohta, Atsushi Nagashima, Masafumi Ito, Masaru Hori, Toshio Goto (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

https://doi.org/10.7567/SSDM.1999.B-3-4

1999 International Conference on Solid State Devices and Materials

[B-3-4] Control of Ion Bombardment and Species for Ultra Low Temperature Formation of Silicon Nitride Gate Dielectric Films Using Plasma Chemical Vapor Deposition