[B-4-3] Electrical Properties of Ru/Ta2O5/Ru Capacitor for 1 Giga-Scale DRAMs and Beyond

Jin-Won Kim, Sang-Don Nam, Seung-Hwan Lee, Seok-Jun Won, Wan-Don Kim, Cha-Young Yoo, Young-Wook Park, Sang-In Lee, Moon-Yong Lee (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.1999.B-4-3