[B-4-3] Electrical Properties of Ru/Ta2O5/Ru Capacitor for 1 Giga-Scale DRAMs and Beyond

Jin-Won Kim、Sang-Don Nam、Seung-Hwan Lee、Seok-Jun Won、Wan-Don Kim、Cha-Young Yoo、Young-Wook Park、Sang-In Lee、Moon-Yong Lee (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.1999.B-4-3