[B-6-1] Highly Reliable Dual Gate Oxide Fabrication by Reducing Wet Etching Time and Re-Oxidation for Sub-Quarter Micron CMOS Devices

Ihl Hyun Cho、Key Min Lee、Hong Goo Choi、Sang Hyuk Park、Seok-Woo Lee、Nag Kyun Sung、Hae Wang Lee、Jae-Gyung Ahn、Yun Jun Huh、Dong Kyun Sohn、Dae Kwan Kang、Jin Won Park (1.R&D Division, LG Semicon. Co., Ltd.)

https://doi.org/10.7567/SSDM.1999.B-6-1