[B-6-3] Effect of in-situ Formed Interlayer at Ta-SiO2 interface on Performance and Reliability in Ta-Gate MOS Devices

Takeo Ushiki、Kunihiro Kawai、Ichiro Ohshima、Tadahiro Ohmi (1.New Industry Creation Hatchery Center and Dept. of E/E, Tohoku University)

https://doi.org/10.7567/SSDM.1999.B-6-3