[B-6-4] Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation

Masaru Moriwaki、Takayuki Yamada、Yoshinao Harada、Shinji Fujii、Michinari Yamanaka (1.ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electronics Corp.)

https://doi.org/10.7567/SSDM.1999.B-6-4