Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO2 Interfaces

Hikaru Kobayashi; Emi Kanazaki; Akira Asano; Kenji Yoneda; Yoshihiro Todokoro; Mikihiko Nishitani

doi:https://doi.org/10.7567/SSDM.1999.B-7-4

[B-7-4] Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO2 Interfaces

Hikaru Kobayashi、Emi Kanazaki、Akira Asano、Kenji Yoneda、Yoshihiro Todokoro、Mikihiko Nishitani (1.Institute of Scientific and Industrial Research, Osaka University、2.ULSI Process Technology Development Center, Matsushita Electronics Corporation、3.Corporate Planning Department, Matsushita Electronics Corporation、4.Display Device Development Center, Matsushita Electrics Industrial Co. Ltd.)

https://doi.org/10.7567/SSDM.1999.B-7-4

1999 International Conference on Solid State Devices and Materials

[B-7-4] Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO2 Interfaces