[B-9-1] Direct Measurement of Transient Drain Current in PD-SOI MOSFETs Using Nuclear Microprobe for Highly Reliable Device Design

T. Iwamatsu、K. Nakayama、H. Takaoka、M. Takai、Y. Yamaguchi、S. Maegawa、M. Inuishi、A. Kinomura、Y. Horino、T. Nishimura (1.ULSI Laboratory, Mitsubishi Electric Corporation、2.Research Center for Materials Science at Extreme Conditions, Osaka University、3.ONRI, AIST)

https://doi.org/10.7567/SSDM.1999.B-9-1