The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy

Shigeo Yamaguchi; Michihiko Kariya; Shugo Nitta; Hiroshi Amano; Isamu Akasaki

doi:https://doi.org/10.7567/SSDM.1999.C-1-4

[C-1-4] The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy

Shigeo Yamaguchi、Michihiko Kariya、Shugo Nitta、Hiroshi Amano、Isamu Akasaki (1.Department of Electrical and Electronic Engineering, Meijo University、2.High-Tech Research Center, Meijo University)

https://doi.org/10.7567/SSDM.1999.C-1-4

1999 International Conference on Solid State Devices and Materials

[C-1-4] The Effect of Isoelectronic In-Doping on the Structural and Optical Properties of (Al)GaN Grown by Metal Organic Vapor Phase Epitaxy