Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale

Akihiro WAKAHARA; Takenori YAMAMOTO; Kouji ISHIO; Akira YOSHIDA; Youji SEKI; Osamu ODA

doi:https://doi.org/10.7567/SSDM.1999.C-2-3

[C-2-3] Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale

Akihiro WAKAHARA、Takenori YAMAMOTO、Kouji ISHIO、Akira YOSHIDA、Youji SEKI、Osamu ODA (1.Dept. of Electrical and Electronic Eng., Toyohashi Univ. of Technology、2.Central Research Lab., Japan Energy Co.)

https://doi.org/10.7567/SSDM.1999.C-2-3

1999 International Conference on Solid State Devices and Materials

[C-2-3] Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale