Optical Recombination Processes in High Quality GaN Films and InGaN Quantum Wells Grown on FIELO-GaN Substrates

A. Atsushi Yamaguchi; Yasunori Mochizuki; Masashi Mizuta

doi:https://doi.org/10.7567/SSDM.1999.C-2-4

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[C-2-4] Optical Recombination Processes in High Quality GaN Films and InGaN Quantum Wells Grown on FIELO-GaN Substrates

A. Atsushi Yamaguchi、Yasunori Mochizuki、Masashi Mizuta (1.Fundamental Research Laboratories, Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation)

https://doi.org/10.7567/SSDM.1999.C-2-4

▲