Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma

Shin-Ya Ootomo; Tamotsu Hashizume; Hideki Hasegawa

doi:https://doi.org/10.7567/SSDM.1999.C-2-5

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[C-2-5] Nitridation of GaP Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma

Shin-Ya Ootomo、Tamotsu Hashizume、Hideki Hasegawa (1.Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Information Engineering, Hokkaido University)

https://doi.org/10.7567/SSDM.1999.C-2-5

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