Polarization Effects in III-N Semiconductor Devices

Vincenzo Fiorentini; Fabio Bernardini

doi:https://doi.org/10.7567/SSDM.1999.C-3-1

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[C-3-1] Polarization Effects in III-N Semiconductor Devices

Vincenzo Fiorentini、Fabio Bernardini (1.Istituto Nazionale per la Fisica della Materia and Dipartimento di Fisica, Universita degli Studi di Cagliari、2.Walter Schottky-Institut, Technische Universitat Munchen)

https://doi.org/10.7567/SSDM.1999.C-3-1

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