[C-3-4] Yellow Luminescence in Gallium Nitride Induced by Intentional Impurity Incorporation During Halide Vapor Phase Epitaxy

R. Zhang、L. Zhang、T. F. Kuech、S. L. Gu、B. Shen、Y. Shi、Y. D. Zheng (1.Department of Physics, Nanjing University、2.Department of Chemical Engineering, University of Wisconsin)

https://doi.org/10.7567/SSDM.1999.C-3-4