Piezoelectric Polarization Effects in GaInN/GaN Heterostructures and Some Consequences for Device Design

Christian Wetzel; Hiroshi Amano; Isamu Akasaki

doi:https://doi.org/10.7567/SSDM.1999.C-4-3

1999 International Conference on Solid State Devices and Materials

1999年9月21日〜 1999年9月24日
Nihon Toshi Center Kaikan, Tokyo, Japan

[C-4-3] Piezoelectric Polarization Effects in GaInN/GaN Heterostructures and Some Consequences for Device Design

Christian Wetzel、Hiroshi Amano、Isamu Akasaki (1.High Tech Research Center, Meijo University、2.Department of Electrical and Electronic Engineering, Meijo University)

https://doi.org/10.7567/SSDM.1999.C-4-3

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