The Potential of III-Nitrides for Use in High-Speed Field-Effect Transistors

Frank Schwierz; Gerhard Gobsch

doi:https://doi.org/10.7567/SSDM.1999.C-5-5

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[C-5-5] The Potential of III-Nitrides for Use in High-Speed Field-Effect Transistors

Frank Schwierz, Gerhard Gobsch (1.Technische Universitat Ilmenau, Institut Festkorperelektronik, 2.Technische Universitat Ilmenau, Institut fur Physik)

https://doi.org/10.7567/SSDM.1999.C-5-5

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