High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode

Shuji Nakamura; Masayuki Senoh; Shin-ichi Nagahama; Toshio Matsushita; Takashi Mukai

doi:https://doi.org/10.7567/SSDM.1999.C-6-5

1999 International Conference on Solid State Devices and Materials

Sep 21, 1999 - Sep 24, 1999
Nihon Toshi Center Kaikan, Tokyo, Japan

[C-6-5] High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode

Shuji Nakamura, Masayuki Senoh, Shin-ichi Nagahama, Toshio Matsushita, Takashi Mukai (1.Department of Research and Development, Nichia Chemical Industries, Ltd.)

https://doi.org/10.7567/SSDM.1999.C-6-5

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