[C-9-1] Effects of Encapsulating Barrier Layer on Ferroelectric Properties of Ir/IrO2/PZT/Pt/IrO2 Capacitor

Yong Tak Lee、Hag-Ju Cho、Sang Jeong Oh、Suk Ho Joo、Joong Jae Lee、Kyu Mann Lee、Soon Oh Park、Young Wook Park、Sang In Lee (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd)

https://doi.org/10.7567/SSDM.1999.C-9-1